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Modelling of SiC and GaN transistors based on pulsed S-parameter measurements

For the design of fast-switching inverters a precise model of power semiconductors is required. Based on pulsed S-parameter measurements in the frequency range of 2 MHz to 500 MHz a SiC MOSFET and a GaN HEMT have been characterized. As basis for precise modelling, measurements under varying load con...

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Autori principali: Martin Hergt, Bernhard Hammer, Martin Sack, Lukas W. Mayer, Sebastian Nielebock, Marc Hiller
Natura: Artigo
Lingua:Inglês
Pubblicazione: Elsevier 2025-12-01
Serie:Power Electronic Devices and Components
Soggetti:
S-parameters
Parameter identification
Device modelling
GaN HEMT
SiC MOSFET
Accesso online:http://www.sciencedirect.com/science/article/pii/S2772370425000331
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