Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. A...

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Principais autores:	Moath Alathbah, Khaled Elgaid
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2022-11-01
סדרה:	Micromachines
נושאים:	AlGaN/GaN HEMTs device isolation AlGaN/AlN/GaN HEMTs planar gatefeed gate leakage HEMT mesa etch
גישה מקוונת:	https://www.mdpi.com/2072-666X/13/11/2007
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