Modelling of SiC and GaN transistors based on pulsed S-parameter measurements

For the design of fast-switching inverters a precise model of power semiconductors is required. Based on pulsed S-parameter measurements in the frequency range of 2 MHz to 500 MHz a SiC MOSFET and a GaN HEMT have been characterized. As basis for precise modelling, measurements under varying load con...

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Autors principals:	Martin Hergt, Bernhard Hammer, Martin Sack, Lukas W. Mayer, Sebastian Nielebock, Marc Hiller
Format:	Artigo
Idioma:	Inglês
Publicat:	Elsevier 2025-12-01
Col·lecció:	Power Electronic Devices and Components
Matèries:	S-parameters Parameter identification Device modelling GaN HEMT SiC MOSFET
Accés en línia:	http://www.sciencedirect.com/science/article/pii/S2772370425000331
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