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The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micr...
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| Pubblicato in: | Sci Rep |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5561118/ https://ncbi.nlm.nih.gov/pubmed/28819151 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-08905-y |
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