The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Lignende værker

• Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
  af: Zhang, Lei, et al.
  Udgivet: (2014)
• Direct growth of freestanding GaN on C-face SiC by HVPE
  af: Tian, Yuan, et al.
  Udgivet: (2015)
• Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
  af: Lee, Moonsang, et al.
  Udgivet: (2018)
• First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy
  af: Lee, Moonsang, et al.
  Udgivet: (2019)
• Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation
  af: Lee, Moonsang, et al.
  Udgivet: (2018)