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Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions
The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-Si(x)C(1−x)) buffer is demonstrated. The a-Si(x)C(1−x) buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO(2)/Si substrate by using a low-temperature plasma...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4726127/ https://ncbi.nlm.nih.gov/pubmed/26794268 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep19757 |
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