Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-Si(x)C(1−x)) buffer is demonstrated. The a-Si(x)C(1−x) buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO(2)/Si substrate by using a low-temperature plasma...

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Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Cheng, Chih-Hsien, Tzou, An-Jye, Chang, Jung-Hung, Chi, Yu-Chieh, Lin, Yung-Hsiang, Shih, Min-Hsiung, Lee, Chao-Kuei, Wu, Chih-I, Kuo, Hao-Chung, Chang, Chun-Yen, Lin, Gong-Ru
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group 2016
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Article
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC4726127/
https://ncbi.nlm.nih.gov/pubmed/26794268
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep19757
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