Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance

This article compares p-GaN-gate all-GaN cascode devices with standalone E-mode HEMTs on SiC substrates, with a focus on double pulse testing (DPT), a critical method for evaluating switching performance under realistic operating conditions. The all-GaN cascode, featuring a gate width of 85 mm, demo...

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Detalhes bibliográficos

Principais autores:	Dian-Ying Wu, Chih-Yung Hsieh, Yi-Xian Huang, Yu-Chen Liu, Wen-Ching Hsu, Ci-Ze Li, Jia-Zhe Liu, Cheng-Yeu Wu, Meng-Chyi Wu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2025-01-01
coleção:	IEEE Journal of the Electron Devices Society
Assuntos:	High electron mobility transistor (HEMT) all-GaN cascode device standalone E-mode HEMT p-GaN-gate Miller effect high current
Acesso em linha:	https://ieeexplore.ieee.org/document/11049654/
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