Novel Bidirectional ESD Circuit for GaN HEMT
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode. During the ESD pulse, a discharging channel in the proposed ESD clamp is built and the gate to so...
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| Asıl Yazarlar: | , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2025-01-01
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| Seri Bilgileri: | Micromachines |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/2072-666X/16/2/129 |
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