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Gate Modulation of Graphene-ZnO Nanowire Schottky Diode
Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (V(g)). The ideality factor of the graphene/ZnO nanowire Schottky di...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4421871/ https://ncbi.nlm.nih.gov/pubmed/25944683 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10125 |
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