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Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity

The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO(2)/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C fo...

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Библиографические подробности
Опубликовано в: :Nanomaterials (Basel)
Главные авторы: Lee, Youngmin, Kim, Deuk Young, Lee, Sejoon
Формат: Artigo
Язык:Inglês
Опубликовано: MDPI 2019
Предметы:
Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC6566797/
https://ncbi.nlm.nih.gov/pubmed/31137675
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9050799
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