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Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity
The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO(2)/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C fo...
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| Опубликовано в: : | Nanomaterials (Basel) |
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| Главные авторы: | , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI
2019
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6566797/ https://ncbi.nlm.nih.gov/pubmed/31137675 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9050799 |
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