Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (V(g)). The ideality factor of the graphene/ZnO nanowire Schottky di...

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Udgivet i:Sci Rep
Main Authors: Liu, Ren, You, Xu-Chen, Fu, Xue-Wen, Lin, Fang, Meng, Jie, Yu, Da-Peng, Liao, Zhi-Min
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2015
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4421871/
https://ncbi.nlm.nih.gov/pubmed/25944683
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10125
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