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Reversible Barrier Switching of ZnO/RuO(2) Schottky Diodes
The current-voltage characteristics of ZnO/RuO [Formula: see text] Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the b...
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| Publié dans: | Materials (Basel) |
|---|---|
| Auteurs principaux: | , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI
2021
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8161001/ https://ncbi.nlm.nih.gov/pubmed/34065310 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14102678 |
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