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Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light

In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I–V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approx...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Lu, Ming-Yen, Lu, Ming-Pei, You, Shuen-Jium, Chen, Chieh-Wei, Wang, Ying-Jhe
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4601028/
https://ncbi.nlm.nih.gov/pubmed/26456370
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15123
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