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Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light
In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I–V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approx...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4601028/ https://ncbi.nlm.nih.gov/pubmed/26456370 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15123 |
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