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The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111)
ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385121/ https://ncbi.nlm.nih.gov/pubmed/25852387 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0809-3 |
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