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Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepare...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Nanoscale Res Lett
मुख्य लेखकों: Su, Xi, Zhang, Guozhen, Wang, Xiao, Chen, Chao, Wu, Hao, Liu, Chang
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: Springer US 2017
विषय:
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC5529301/
https://ncbi.nlm.nih.gov/pubmed/28754038
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2239-x
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