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Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepare...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5529301/ https://ncbi.nlm.nih.gov/pubmed/28754038 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2239-x |
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