A carregar...
The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111)
ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical...
Na minha lista:
| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385121/ https://ncbi.nlm.nih.gov/pubmed/25852387 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0809-3 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|