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Fabrication of high performance thin-film transistors via pressure-induced nucleation
We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irrad...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2014
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4215323/ https://ncbi.nlm.nih.gov/pubmed/25358809 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep06858 |
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