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Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlO(x) films under 150 °C permitted the formation of a dense fil...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5455382/ https://ncbi.nlm.nih.gov/pubmed/28793608 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8105352 |
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