A carregar...

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device

The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO( x )/Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial res...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Main Authors: Yuan, Fang, Zhang, Zhigang, Wang, Jer-Chyi, Pan, Liyang, Xu, Jun, Lai, Chao-Sung
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2014
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4159639/
https://ncbi.nlm.nih.gov/pubmed/25246866
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-452
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!