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Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag e...
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| Autors principals: | , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4186951/ https://ncbi.nlm.nih.gov/pubmed/25294977 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-548 |
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