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Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease o...

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Detalhes bibliográficos
Publicado no:Beilstein J Nanotechnol
Main Authors: Sánta, Botond, Molnár, Dániel, Haiber, Patrick, Gubicza, Agnes, Szilágyi, Edit, Zolnai, Zsolt, Halbritter, András, Csontos, Miklós
Formato: Artigo
Idioma:Inglês
Publicado em: Beilstein-Institut 2020
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6964644/
https://ncbi.nlm.nih.gov/pubmed/31976200
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.11.9
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