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Asymmetry-induced resistive switching in Ag-Ag(2)S-Ag memristors enabling a simplified atomic-scale memory design
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching me...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4973259/ https://ncbi.nlm.nih.gov/pubmed/27488426 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep30775 |
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