Caricamento...
Asymmetry-induced resistive switching in Ag-Ag(2)S-Ag memristors enabling a simplified atomic-scale memory design
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching me...
Salvato in:
| Pubblicato in: | Sci Rep |
|---|---|
| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2016
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4973259/ https://ncbi.nlm.nih.gov/pubmed/27488426 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep30775 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|