Asymmetry-induced resistive switching in Ag-Ag(2)S-Ag memristors enabling a simplified atomic-scale memory design

Por Gubicza, Agnes, Manrique, Dávid Zs., Pósa, László, Lambert, Colin J., Mihály, György, Csontos, Miklós, Halbritter, András
Publicado no Sci Rep (2016)