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Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

AgI nanoionics-based resistive switching memories were studied in respect to chemical stability of the Ag/AgI interface using x-ray absorption spectroscopy. The apparent dissolution of Ag films of thickness below some tens of nanometers and the loss of electrode/electrolyte contact was critically ad...

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Detalhes bibliográficos
Main Authors: Cho, Deok-Yong, Tappertzhofen, Stefan, Waser, Rainer, Valov, Ilia
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3558693/
https://ncbi.nlm.nih.gov/pubmed/23378904
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01169
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