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Picosecond multilevel resistive switching in tantalum oxide thin films
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resis...
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| Опубликовано в: : | Sci Rep |
|---|---|
| Главные авторы: | , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Nature Publishing Group UK
2020
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7532197/ https://ncbi.nlm.nih.gov/pubmed/33009437 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-73254-2 |
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