Carregant...
Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions
Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease o...
Guardat en:
| Publicat a: | Beilstein J Nanotechnol |
|---|---|
| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Beilstein-Institut
2020
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6964644/ https://ncbi.nlm.nih.gov/pubmed/31976200 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.11.9 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|