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Effect of Annealing Temperature for Ni/AlO(x)/Pt RRAM Devices Fabricated with Solution-Based Dielectric
Resistive random access memory (RRAM) devices with Ni/AlO(x)/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO(x)) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar...
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| Publicado no: | Micromachines (Basel) |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6680579/ https://ncbi.nlm.nih.gov/pubmed/31269730 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10070446 |
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