Memristive Non-Volatile Memory Based on Graphene Materials

Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artifi...

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Bibliografiske detaljer
Udgivet i:Micromachines (Basel)
Main Authors: Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Mitrovic, Ivona Z., Yang, Li, Wen, Jiacheng, Huang, Yanbo, Li, Puzhuo, Zhao, Cezhou
Format: Artigo
Sprog:Inglês
Udgivet: MDPI 2020
Fag:
Review
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7231216/
https://ncbi.nlm.nih.gov/pubmed/32218324
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11040341
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