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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generatio...

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Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z., Yang, Li, Zhao, Cezhou
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7466260/
https://ncbi.nlm.nih.gov/pubmed/32717952
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10081437
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