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Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method
Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd(2)O(3)) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement...
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| Publicado en: | Materials (Basel) |
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| Autores principales: | , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5744350/ https://ncbi.nlm.nih.gov/pubmed/29231867 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10121415 |
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