Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

Por Chen, Kai-Huang, Kao, Ming-Cheng, Huang, Shou-Jen, Li, Jian-Zhi
Publicado no Materials (Basel) (2017)

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

Por Kao, Ming-Cheng, Chen, Hone-Zern, Young, San-Lin, Chen, Kai-Huang, Chiang, Jung-Lung, Shi, Jen-Bin
Publicado no Materials (Basel) (2017)

Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba(0.95)Ca(0.05))(Ti(0.93)Sn(0.07))O(3) Lead-Free Piezoceramic Sheets

Por Cheng, Chien-Min, Chen, Kai-Huang, Lee, Da-Huei, Jong, Fuh-Cheng, Chen, Mei-Li, Chang, Jhih-Kai
Publicado no Materials (Basel) (2018)

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

Por Chen, Kai-Huang, Tsai, Tsung-Ming, Cheng, Chien-Min, Huang, Shou-Jen, Chang, Kuan-Chang, Liang, Shu-Ping, Young, Tai-Fa
Publicado no Materials (Basel) (2017)

Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment

Por Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Publicado no Nanoscale Res Lett (2016)

Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode

Por Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Publicado no Nanoscale Res Lett (2016)

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Por Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Publicado em 2014

Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer

Por Chang, Kuan-Chang, Huang, Jen-wei, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Young, Tai-Fa, Chen, Jung-Hui, Zhang, Rui, Lou, Jen-Chung, Huang, Syuan-Yong, Pan, Yin-Chih, Huang, Hui-Chun, Syu, Yong-En, Gan, Der-Shin, Bao, Ding-Hua, Sze, Simon M
Publicado em 2013

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Por Zhang, Rui, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Lou, Jen-Chung, Chen, Jung-Hui, Young, Tai-Fa, Shih, Chih-Cheng, Yang, Ya-Liang, Pan, Yin-Chih, Chu, Tian-Jian, Huang, Syuan-Yong, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Sze, Simon M
Publicado em 2013