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Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
Bi(0.8)Pr(0.2)Fe(0.95)Mn(0.05)O(3)/Bi(3.96)Gd(0.04)Ti(2.95)W(0.05)O(12) (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO(2)/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films ex...
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| Foilsithe in: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
MDPI
2017
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5706274/ https://ncbi.nlm.nih.gov/pubmed/29156636 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10111327 |
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