Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox m...

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Detalhes bibliográficos
Main Authors: Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2014
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3922695/
https://ncbi.nlm.nih.gov/pubmed/24475979
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-52
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