Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox m...

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Dades bibliogràfiques
Autors principals: Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Format: Artigo
Idioma:Inglês
Publicat: Springer 2014
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3922695/
https://ncbi.nlm.nih.gov/pubmed/24475979
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-52
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