Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer

To improve the operation current lowing of the Zr:SiO(2) RRAM devices, a space electric field concentrated effect established by the porous SiO(2) buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HR...

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Autors principals: Chang, Kuan-Chang, Huang, Jen-wei, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Young, Tai-Fa, Chen, Jung-Hui, Zhang, Rui, Lou, Jen-Chung, Huang, Syuan-Yong, Pan, Yin-Chih, Huang, Hui-Chun, Syu, Yong-En, Gan, Der-Shin, Bao, Ding-Hua, Sze, Simon M
Format: Artigo
Idioma:Inglês
Publicat: Springer 2013
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3881491/
https://ncbi.nlm.nih.gov/pubmed/24330524
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-523
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