Physical and chemical mechanisms in oxide-based resistance random access memory

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an...

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Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng, Jin-Cheng, Sze, Simon M
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2015
Matèries:
Nano Review
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4388104/
https://ncbi.nlm.nih.gov/pubmed/25873842
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0740-7
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