Physical and chemical mechanisms in oxide-based resistance random access memory

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng, Jin-Cheng, Sze, Simon M
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2015
Assuntos:
Nano Review
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4388104/
https://ncbi.nlm.nih.gov/pubmed/25873842
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0740-7
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados