Physical and chemical mechanisms in oxide-based resistance random access memory

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an...

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Bibliografiske detaljer
Udgivet i:Nanoscale Res Lett
Main Authors: Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng, Jin-Cheng, Sze, Simon M
Format: Artigo
Sprog:Inglês
Udgivet: Springer US 2015
Fag:
Nano Review
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4388104/
https://ncbi.nlm.nih.gov/pubmed/25873842
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0740-7
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