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Surface scattering mechanisms of tantalum nitride thin film resistor
In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-ze...
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| Autors principals: | , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4030298/ https://ncbi.nlm.nih.gov/pubmed/24725295 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-177 |
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