Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox m...

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Bibliografische gegevens
Hoofdauteurs: Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: Springer 2014
Onderwerpen:
Nano Express
Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3922695/
https://ncbi.nlm.nih.gov/pubmed/24475979
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-52
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