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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application
Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generatio...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7466260/ https://ncbi.nlm.nih.gov/pubmed/32717952 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10081437 |
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