Carregant...
The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics
When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical const...
Guardat en:
| Autors principals: | , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2014
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4159380/ https://ncbi.nlm.nih.gov/pubmed/25246873 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-472 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|