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Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
In this study, films of gallium oxide (Ga(2)O(3)) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga(2)O(3) thin films were investigated; the saturation growth displayed a linear depe...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4851678/ https://ncbi.nlm.nih.gov/pubmed/27129687 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1448-z |
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