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The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics
When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical const...
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| Main Authors: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2014
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4159380/ https://ncbi.nlm.nih.gov/pubmed/25246873 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-472 |
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