Φορτώνει......
The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics
When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical const...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Springer
2014
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4159380/ https://ncbi.nlm.nih.gov/pubmed/25246873 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-472 |
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