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Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure
Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO( x )/TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO( x ) layer with a thickness of 7 nm. A thin layer of TiO( x )N( y ) with a t...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2014
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4066319/ https://ncbi.nlm.nih.gov/pubmed/24982604 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-292 |
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