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Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy

In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of com...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijät: Picco, Andrea, Bonera, Emiliano, Pezzoli, Fabio, Grilli, Emanuele, Schmidt, Oliver G, Isa, Fabio, Cecchi, Stefano, Guzzi, Mario
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Springer 2012
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC3534003/
https://ncbi.nlm.nih.gov/pubmed/23171543
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-633
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