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Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy e...
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| Main Authors: | , , , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2012
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3494552/ https://ncbi.nlm.nih.gov/pubmed/22937992 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-493 |
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